1
Transistor
2SD661, 2SD661A
Silicon NPN epitaxial planer type
For low-frequency and low-noise amplification
s
Features
q
Low noise voltage NV.
q
High foward current transfer ratio h
FE
.
q
M type package allowing easy automatic and manual insertion as
well as stand-alone fixing to the printed circuit board.
s
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
EIAJ:SC71
3:Emitter
M Type Mold Package
6.9
0.1
0.55
0.1
0.45
0.05
1.0
0.1
1.0
2.5
0.1
1.0
1.5
1.5 R0.9
R0.9
R0.7
0.4
0.85
3.5
0.1
2.0
0.2
2.4
0.2
1.25
0.05
4.1
0.2
4
.5
0.1
2.5
2.5
1
2
3
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
35
55
35
55
7
200
100
400
150
55 ~ +150
Unit
V
V
V
mA
mA
mW
C
C
2SD661
2SD661A
2SD661
2SD661A
s
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Transition frequency
Noise voltage
Symbol
I
CBO
I
CEO
V
CBO
V
CEO
V
EBO
h
FE
*
V
CE(sat)
f
T
NV
Conditions
V
CB
= 20V, I
E
= 0
V
CE
= 20V, I
B
= 0
I
C
= 10
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
A, I
C
= 0
V
CE
= 10V, I
C
= 2mA
I
C
= 100mA, I
B
= 10mA
V
CB
= 10V, I
E
= 2mA, f = 200MHz
V
CE
= 10V, I
C
= 1mA, G
V
= 80dB
R
g
= 100k
, Function = FLAT
min
35
55
35
55
7
210
typ
200
max
0.1
1
650
1
150
Unit
A
A
V
V
V
V
MHz
mV
*
h
FE
Rank classification
Rank
R
S
T
h
FE
210 ~ 340
290 ~ 460
360 ~ 650
2SD661
2SD661A
2SD661
2SD661A
2
Transistor
2SD661, 2SD661A
P
C
-- Ta
I
C
-- V
CE
I
C
-- I
B
I
B
-- V
BE
I
C
-- V
BE
V
CE(sat)
-- I
C
h
FE
-- I
C
f
T
-- I
E
C
ob
-- V
CB
0
160
40
120
80
140
20
100
60
0
500
400
300
200
100
Ambient temperature Ta (C)
Collector power dissipation P
C
(mW
)
0
12
10
8
2
6
4
0
160
120
40
100
140
80
20
60
Ta=25C
I
B
=350
A
300
A
250
A
200
A
150
A
100
A
50
A
Collector to emitter voltage V
CE
(V)
Collector current I
C
(mA
)
0
0.5
0.4
0.1
0.3
0.2
0
160
120
40
100
140
80
20
60
V
CE
=5V
Ta=25C
Base current I
B
(mA)
Collector current I
C
(mA
)
0
1.0
0.8
0.2
0.6
0.4
0
800
600
200
500
700
400
100
300
V
CE
=5V
Ta=25C
Base to emitter voltage V
BE
(V)
Base current I
B
(
A
)
0
2.0
1.6
0.4
1.2
0.8
0
120
100
80
60
40
20
V
CE
=5V
Ta=75C
25C
25C
Base to emitter voltage V
BE
(V)
Collector current I
C
(mA
)
0.1
1
10
100
0.3
3
30
0.01
0.03
0.1
0.3
1
3
10
30
100
I
C
/I
B
=10
25C
25C
Ta=75C
Collector current I
C
(mA)
Collector to emitter saturation voltage V
CE(sat)
(V
)
0.1
1
10
100
0.3
3
30
0
720
600
480
360
240
120
V
CE
=5V
Ta=75C
25C
25C
Collector current I
C
(mA)
Forward current transfer ratio h
FE
0.1
1
10
100
0.3
3
30
0
500
400
300
200
100
V
CB
=5V
Ta=25C
Emitter current I
E
(mA)
Transition frequency f
T
(MHz
)
0.1
1
10
100
0.3
3
30
0
20
16
12
8
4
I
E
=0
f=1MHz
Ta=25C
Collector to base voltage V
CB
(V)
Collector output capacitance C
ob
(pF
)
3
Transistor
2SD661, 2SD661A
NV -- V
CE
NV -- V
CE
NV -- I
C
NV -- I
C
NV -- R
g
NV -- R
g
1
3
10
30
100
0
160
120
40
100
140
80
20
60
I
C
=1mA
G
V
=80dB
Function=FLAT
4.7k
R
g
=100k
22k
Collector to emitter voltage V
CE
(V)
Noise voltage NV
(mV
)
1
3
10
30
100
0
300
240
120
180
60
I
C
=1mA
G
V
=80dB
Function=RIAA
4.7k
R
g
=100k
22k
Collector to emitter voltage V
CE
(V)
Noise voltage NV
(mV
)
0.01
0.03
0.1
0.3
1
0
160
120
40
100
140
80
20
60
V
CE
=10V
G
V
=80dB
Function=FLAT
4.7k
R
g
=100k
22k
Collector current I
C
(mA)
Noise voltage NV
(mV
)
0.01
0.03
0.1
0.3
1
0
300
240
120
180
60
V
CE
=10V
G
V
=80dB
Function=RIAA
4.7k
R
g
=100k
22k
Collector current I
C
(mA)
Noise voltage NV
(mV
)
1
3
10
30
100
0
160
120
40
100
140
80
20
60
V
CE
=10V
G
V
=80dB
Function=FLAT
0.1mA
I
C
=1mA
0.5mA
Signal source resistance R
g
(k
)
Noise voltage NV
(mV
)
1
3
10
30
100
0
300
240
120
180
60
V
CE
=10V
G
V
=80dB
Function=RIAA
0.1mA
I
C
=1mA
0.5mA
Signal source resistance R
g
(k
)
Noise voltage NV
(mV
)
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